[18p-F206-1~15] 6.2 Carbon-based thin films

[18p-F206-11] Low Temperature Application of Diamond Schottky-PN Diode

〇Kenichiro Takakura¹, Akihiro Toda¹, Kento Matsuki¹, Tsubasa Matsumoto², Norio Tokuda² (1.NIT Kumamoto, 2.Kanazawa Univ.)

Keywords:Diamond, Schottky-PN diode, Low Temperature Application

Low temperature application of diamond Schottky-PN diode which suggested for rectifying device is evaluated. The 307 μm-thick of p-type single crystal diamond substrate (specific resistance: ~10^-2 Ω·cm) doped with boron was used. The 74 nm-thick of n-type diamond layer (specific resistance: >10¹⁰ Ω·cm) was grown on the substrate. Thereafter, oxygen was terminated by hot mixed acid treatment. Ni and Au were deposited for the n-type Schottky contact and the p-type ohmic contact, respectively.It is confirmed that the device temperature did not rise by I/V measurement. Despite the presence of a nitrogen-doped N-type layer with a deep donor level of 1.7 eV, the current density at forward voltage of 4 V is about 5×10³ A/cm ² at 17 K. In addition, it can be confirmed that diode rectification characteristics with an on/off ratio of 10⁸ or more can be maintained even at 17 K.