[18p-F206-1~15] 6.2 Carbon-based thin films

△ [18p-F206-12] Complementary High Voltage Switching Circuit Using Cascode Diamond p-FET

〇(B)Aoi Yamamoto¹, Bi Te¹, Niu Junxiong¹, Kudo Takuya¹, Oi Nobutaka¹, Okubo Satoshi¹, Inaba Masafumi⁴, Sasaki Toshio², Hiraiwa Atsushi⁴, Kawarada Hiroshi^1,2,3 (1.Waseda Univ., 2.NTRC, 3.ZAIKEN, 4.IMaSS)

Keywords:diamond, power device, circuit

We fabricated diamond MOSFETs using 2 dimension hole gas (2DHG) as carriers, realized normally off by cascode connection with low breakdown voltage normally off silicon p-FET, and reported high breakdown voltage exceeding 1.7 kV. Diamond is currently the most excellent in high breakdown voltage p-FET, and complementary inverter circuit with existing high breakdown voltage n-FET is capable of power switching at high speed and low loss unprecedented. We report on switching operation from -200 V to +200 V using Cascode diamond p-FET and Cascode GaN n-FET this time.