The 65h JSAP Spring Meeting, 2018

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6 Thin Films and Surfaces » 6.2 Carbon-based thin films

[18p-F206-1~15] 6.2 Carbon-based thin films

Sun. Mar 18, 2018 1:45 PM - 6:00 PM F206 (61-206)

Tsuyoshi Yoshitake(Kyushu Univ.), Hitoshi Umezawa(AIST)

5:30 PM - 5:45 PM

[18p-F206-14] A Study of Room-Temperature Bonding of SOI Wafer with Diamond-BOX Layer

〇Yoshihiro Koga1, Kazunari Kurita1 (1.SUMCO CORPORATION)

Keywords:SOI wafer, diamond layer, room-temprature bonding

We have been studying a new SOI wafer with diamond-BOX layer to suppress self-heating of power devices. In this studying, we demonstrate fabrication of SOI wafer using room-temprature bonding in ultra-high vacuum.