[18p-G203-1~18] 13.5 Semiconductor devices and related technologies

[18p-G203-6] Necessity of Transient Analysis in Simulation of Ferroelectric Negative Capacitance Devices

〇Hiroyuki Ota¹, Shinji Migita¹, Tsutomu Ikegami¹, Junichi Hattori¹, Hidehiro Asai¹, Koichi Fukuda¹, Akira Toriumi² (1.AIST, 2.Univ. of Tokyo)

Keywords:semiconductor, ferroelectric, negative capacitance

We address necessity of transient analysis in simulation of the negative capacitance (NC) devices. In DC performance simulation of NC FETs by conventional technology computer aided design, the differential term of the polarization P (dP/dt) in the Landau–Khalatnikov equation has been ignored. We point out that results obtained by the conventional method are physically unrealistic in the case that NC is unstable by taking simple calculation of metal (M)/ferroelectric (F)/insulator (I)/metal (M) capacitances as an example. In contrast, the MFIM capacitance obtained by transient analysis in which the dP/dt is considered is found to be reasonable regardless of stability of NC. Those results indicate that the transient analysis is indispensable to obtain rationale solution in NC device simulation.