The 65h JSAP Spring Meeting, 2018

Presentation information

Oral presentation

13 Semiconductors » 13.8 Optical properties and light-emitting devices

[18p-G204-1~16] 13.8 Optical properties and light-emitting devices

Sun. Mar 18, 2018 1:15 PM - 5:30 PM G204 (63-204)

Jumpei Ueda(Kyoto Univ.), Jun Tatebayashi(Osaka Univ.)

3:45 PM - 4:00 PM

[18p-G204-10] Enhanced photoluminescence and Raman spectra in SnS-Sn nanohybrids structures with Sn nanosheets

Anita R Warrier1, R Gandhimathi (1.Academy of Maritime education and Training)

Keywords:semiconductor, photoluminescence, surface plasmon resonance

We report on enhancement of photoluminescence of SnS quantum dots by embedding them in a mesh of Sn nanostructures. SnS quantum dots with band gap ~ 2.7 eV are embedded in a mesh of Sn nanostructures, that are synthesized from tin chloride solution using sodium borohydride as reducing agent. The synthesized Sn nanostructures have a morphology dependent, tunable surface plasmon resonance ranging from UV region (295 nm) to visible region (400 nm) of the electromagnetic spectrum. In the SnS-Sn nanohybrids, the excitons are strongly coupled with plasmons leading to a shift in the excitonic binding energy (~ 400 meV). Due to the influence of Sn nanoparticles on the SnS quantum dots, the photoluminescence and Raman line intensity is enhanced by an order of ~103. The enhancement is more pronounced for Sn nanosheets due to the large surface area and visible light surface plasmon resonance.