The 65h JSAP Spring Meeting, 2018

Presentation information

Oral presentation

13 Semiconductors » 13.8 Optical properties and light-emitting devices

[18p-G204-1~16] 13.8 Optical properties and light-emitting devices

Sun. Mar 18, 2018 1:15 PM - 5:30 PM G204 (63-204)

Jumpei Ueda(Kyoto Univ.), Jun Tatebayashi(Osaka Univ.)

4:00 PM - 4:15 PM

[18p-G204-11] Excitation wavelength dependence of anti-Stokes photoluminescence in YAG:Yb

Yuta Nakayama1, Kota Terada1, Harada Yukihiro1, Kita Takashi1 (1.Kobe Univ.)

Keywords:rare earth element, anti-Stokes photoluminescence, laser cooling

Solid state laser cooling utilizing anti-Stokes emission through phonon absorption is expected as a new cooling technology. The cooling from room temperature to 91 K has been achieved in Yb 3 + substituted Yttrium Lithium Fluoride(YLF) with low maximum phonon energy in 2016. This study was performed to clarify excitation wavelength dependence of anti-Stokes Photoluminescence in Yttrium Aluminum Garnet (YAG) with low maximum phonon energy.