[18p-G204-1~16] 13.8 光物性・発光デバイス

▲ [18p-G204-10] Enhanced photoluminescence and Raman spectra in SnS-Sn nanohybrids structures with Sn nanosheets

〇Anita R Warrier¹、R Gandhimathi (1.Academy of Maritime education and Training)

キーワード：semiconductor, photoluminescence, surface plasmon resonance

We report on enhancement of photoluminescence of SnS quantum dots by embedding them in a mesh of Sn nanostructures. SnS quantum dots with band gap ~ 2.7 eV are embedded in a mesh of Sn nanostructures, that are synthesized from tin chloride solution using sodium borohydride as reducing agent. The synthesized Sn nanostructures have a morphology dependent, tunable surface plasmon resonance ranging from UV region (295 nm) to visible region (400 nm) of the electromagnetic spectrum. In the SnS-Sn nanohybrids, the excitons are strongly coupled with plasmons leading to a shift in the excitonic binding energy (~ 400 meV). Due to the influence of Sn nanoparticles on the SnS quantum dots, the photoluminescence and Raman line intensity is enhanced by an order of ~10³_. The enhancement is more pronounced for Sn nanosheets due to the large surface area and visible light surface plasmon resonance.