[18p-P14-1~19] 15.6 Group IV Compound Semiconductors (SiC)

[18p-P14-14] The oxinitridation simulation of 4H-SiC with NO molecules
on (0001) Si-face and (000-1) C-face

〇Takayuki Hirose¹, Miki Ogasawara¹, Daisuke Mori¹, Yutaka Terao¹ (1.Fuji Electric)

Keywords:SiC, simulation, nitric monoxide