[18p-P14-1~19] 15.6 Group IV Compound Semiconductors (SiC)

[18p-P14-4] Investigation of Mechano-Chemical Treated Surface of 4H-SiC
by Scanning Probe Microscope

〇Ryoji Hiraide¹, Shinya Isoya¹, Toshihiro Okamoto², Masanobu Haraguchi² (1.Kemet Japan Co.,LTD., 2.FRC,Tokushima Univ.)

Keywords:Semconductor, Silicon Carbide, Power Device