[18p-P14-1~19] 15.6 Group IV Compound Semiconductors (SiC)

[18p-P14-6] Radiation Efficiency Enhancement of Single Photon Source near Stacking Fault in 4H-SiC Epilayer

Shuhei Akahori¹, Yoritaka Furukawa², Yuichiro Matsushita², Takeshi Ohshima³, 〇Yasuto Hijikata¹ (1.Saitama Univ., 2.The Univ. of Tokyo, 3.QST)

Keywords:single photon source, stacking fault, oxidation

Optical properties of various surface single photon sources (SPSs) near Double Shockley Stacking Fault (2SSF) in a 4H-SiC epilayer were investigated by comparing to the surface SPSs without 2SSF region. As a result, it was found that the surface SPSs near 2SSF relatively have higher radiation intensities than the SPSs without 2SSF.