[19a-C302-1~12] 13.7 Compound and power electron devices and process technology

[19a-C302-12] Optical characterization of GaN layers homoepitaxially grown on a freestanding bulk GaN substrate by metal-organic chemical vapor phase epitaxy

〇Kazunobu Kojima¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Shigefusa Chichibu¹ (1.IMRAM, Tohoku Univ., 2.Sciocs Co. Ltd.)

Keywords:GaN, Internal quantum efficiency