[19a-C302-1~12] 13.7 Compound and power electron devices and process technology

△ [19a-C302-2] Hole trap occupancy ratio in homoepitaxial n-type GaN under sub-bandgap light irradiation

〇Kazutaka Kanegae¹, Masahiro Horita¹, Tsunenobu Kimoto¹, Jun Suda^1,2,3 (1.Kyoto Univ., 2.Nagoya Univ. IMaSS, 3.Nagoya Univ.)

Keywords:GaN, Hole trap, ICTS

We aim to establish the accurate and simple evaluation method of H1 trap concentration and have performed OICTS using sub-bandgap light for Ni/n-GaN Schottky barrier diodes. However, the measured concentrations are apparent concentration, and hole trap occupancy ratio is necessary for determine accurate concentration of H1 trap. In this study, we performed ICTS and OICTS for same p-n junction diode and tried estimating the hole trap occupancy ratio by comparing those results.