The 65h JSAP Spring Meeting, 2018

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[19a-C302-1~12] 13.7 Compound and power electron devices and process technology

Mon. Mar 19, 2018 9:00 AM - 12:15 PM C302 (52-302)

Makoto Miyoshi(Nagoya Inst. of Tech.)

10:15 AM - 10:30 AM

[19a-C302-6] Time-resolved photoluminescence characterization of Mg-ion implanted N-polar GaN

Kohei Shima1, Hiroko Iguchi2, Tetsuo Narita2, Keita Kataoka2, Akira Uedono3, Kazunobu Kojima1, Shigefusa Chichibu1,4 (1.IMRAM-Tohoku Univ., 2.Toyota Central R&D Labs., 3.Univ. of Tsukuba, 4.Nagoya Univ.)

Keywords:GaN, Mg-doped p-type GaN, PL lifetime

縦型GaNパワーデバイスの実現に向けて、活性化アニール時の熱的安定性に優れるN極性-c面にイオン注入を行うことにより形成されたGaN:Mgの発光ダイナミクスを報告する。