Oral presentation
13 Semiconductors » 13.7 Compound and power electron devices and process technology
Mon. Mar 19, 2018 9:00 AM - 12:15 PM C302 (52-302)
Makoto Miyoshi(Nagoya Inst. of Tech.)
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9:00 AM - 9:15 AM
〇(M1)Shintaro Makihira1, Nobuya Mori1 (1.Osaka Univ.)
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9:15 AM - 9:30 AM
〇Kazutaka Kanegae1, Masahiro Horita1, Tsunenobu Kimoto1, Jun Suda1,2,3 (1.Kyoto Univ., 2.Nagoya Univ. IMaSS, 3.Nagoya Univ.)
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9:30 AM - 9:45 AM
〇(B)Keito Aoshima1, Kazutaka Kanegae2, Masahiro Horita2, Jun Suda2,3,4 (1.Nagoya Univ., Eng., 2.Kyoto Univ., 3.Nagoya Univ. IMaSS, 4.Nagoya Univ.)
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9:45 AM - 10:00 AM
〇(M1)Takato Asada1, Kenji Ito2, Kazuyoshi Tomita2, Tetsuo Narita2, Tetsu Kachi3, Masashi Kato1,3 (1.Nagoya Inst. of Tech., 2.Toyota Central R&D Labs., 3.Nagoya Univ.)
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10:00 AM - 10:15 AM
〇Masashi Kato1,3, Takato Asada1, Kenji Ito2, Kazuyoshi Tomita2, Tetsuo Narita2, Tetsu Kachi3 (1.NITech, 2.Toyota Central R&D Labs., 3.Nagoya Univ.)
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10:15 AM - 10:30 AM
〇Kohei Shima1, Hiroko Iguchi2, Tetsuo Narita2, Keita Kataoka2, Akira Uedono3, Kazunobu Kojima1, Shigefusa Chichibu1,4 (1.IMRAM-Tohoku Univ., 2.Toyota Central R&D Labs., 3.Univ. of Tsukuba, 4.Nagoya Univ.)
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10:45 AM - 11:00 AM
〇(M1)Kei Uetake1, Naoshige Yokota1, Masamichi Akazawa1 (1.RCIQE Hokkaido Univ.)
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11:00 AM - 11:15 AM
〇(M2)Ryouhei Inoue1, Seiji Nakamura1, Tsugunori Okumura1 (1.Tokyo Metro. Univ.)
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11:15 AM - 11:30 AM
〇(M1)Tatsuya Kogiso1, Yutaka Tokuda1, Tetsuo Narita2, Kazuyoshi Tomita2, Tetsu Kachi3 (1.Aichi Inst. of Technol., 2.Toyota Central R&D Labs., Inc., 3.Nagoya University)
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11:30 AM - 11:45 AM
〇Junko Maekawa1, Hitoshi Kawanowa1, Masahiko Aoki1, Katsumi Takahiro2, Toshiyuki Isshiki2 (1.Ion Technology Center Co., Ltd, 2.Kyoto Institute of Technology)
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11:45 AM - 12:00 PM
〇FUMIMASA HORIKIRI1, YOSHINOBU NARITA1, YOSHIODA TAKEHIRO1 (1.Sciocs Co. Ltd.)
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12:00 PM - 12:15 PM
〇Kazunobu Kojima1, Fumimasa Horikiri2, Yoshinobu Narita2, Takehiro Yoshida2, Shigefusa Chichibu1 (1.IMRAM, Tohoku Univ., 2.Sciocs Co. Ltd.)
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