Keito Aoshima

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Speaker, Author, Co-Author

Mon. Mar 19, 2018 9:00 AM - 12:15 PM C302 (52-302)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[19a-C302-1~12] 13.7 Compound and power electron devices and process technology

9:30 AM - 9:45 AM

△ [19a-C302-3] Electron traps in homoepitaxial n-type GaN formed by gamma-ray irradiation

〇(B)Keito Aoshima¹, Kazutaka Kanegae², Masahiro Horita², Jun Suda^2,3,4 (1.Nagoya Univ., Eng., 2.Kyoto Univ., 3.Nagoya Univ. IMaSS, 4.Nagoya Univ.)