Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[19a-C302-1~12] 13.7 Compound and power electron devices and process technology

Mon. Mar 19, 2018 9:00 AM - 12:15 PM C302 (52-302)

Makoto Miyoshi(Nagoya Inst. of Tech.)

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9:00 AM - 9:15 AM

△ [19a-C302-1] Intracollisional Field Effect of Polar Optical Phonon Scattering in GaN

〇(M1)Shintaro Makihira¹, Nobuya Mori¹ (1.Osaka Univ.)

9:15 AM - 9:30 AM

△ [19a-C302-2] Hole trap occupancy ratio in homoepitaxial n-type GaN under sub-bandgap light irradiation

〇Kazutaka Kanegae¹, Masahiro Horita¹, Tsunenobu Kimoto¹, Jun Suda^1,2,3 (1.Kyoto Univ., 2.Nagoya Univ. IMaSS, 3.Nagoya Univ.)

9:30 AM - 9:45 AM

△ [19a-C302-3] Electron traps in homoepitaxial n-type GaN formed by gamma-ray irradiation

〇(B)Keito Aoshima¹, Kazutaka Kanegae², Masahiro Horita², Jun Suda^2,3,4 (1.Nagoya Univ., Eng., 2.Kyoto Univ., 3.Nagoya Univ. IMaSS, 4.Nagoya Univ.)

9:45 AM - 10:00 AM

△ [19a-C302-4] Slow decay of carrier recombination in GaN epilayers on GaN substrates

〇(M1)Takato Asada¹, Kenji Ito², Kazuyoshi Tomita², Tetsuo Narita², Tetsu Kachi³, Masashi Kato^1,3 (1.Nagoya Inst. of Tech., 2.Toyota Central R&D Labs., 3.Nagoya Univ.)

10:00 AM - 10:15 AM

[19a-C302-5] Analyses for slow decay components in TR-PL signals from GaN homoepitaxial layers

〇Masashi Kato^1,3, Takato Asada¹, Kenji Ito², Kazuyoshi Tomita², Tetsuo Narita², Tetsu Kachi³ (1.NITech, 2.Toyota Central R&D Labs., 3.Nagoya Univ.)

10:15 AM - 10:30 AM

△ [19a-C302-6] Time-resolved photoluminescence characterization of Mg-ion implanted N-polar GaN

〇Kohei Shima¹, Hiroko Iguchi², Tetsuo Narita², Keita Kataoka², Akira Uedono³, Kazunobu Kojima¹, Shigefusa Chichibu^1,4 (1.IMRAM-Tohoku Univ., 2.Toyota Central R&D Labs., 3.Univ. of Tsukuba, 4.Nagoya Univ.)

10:45 AM - 11:00 AM

[19a-C302-7] Change in electrical properties of Mg-ion implanted GaN by annealing (2)

〇(M1)Kei Uetake¹, Naoshige Yokota¹, Masamichi Akazawa¹ (1.RCIQE Hokkaido Univ.)

11:00 AM - 11:15 AM

[19a-C302-8] Behavior of plasma-induced defects in p-GaN

〇(M2)Ryouhei Inoue¹, Seiji Nakamura¹, Tsugunori Okumura¹ (1.Tokyo Metro. Univ.)

11:15 AM - 11:30 AM

[19a-C302-9] Characterization of traps in MOCVD p-GaN by low-frequency capacitance DLTS

〇(M1)Tatsuya Kogiso¹, Yutaka Tokuda¹, Tetsuo Narita², Kazuyoshi Tomita², Tetsu Kachi³ (1.Aichi Inst. of Technol., 2.Toyota Central R&D Labs., Inc., 3.Nagoya University)

11:30 AM - 11:45 AM

[19a-C302-10] Defect characterization of GaN substrate with hot implant process by TEM

〇Junko Maekawa¹, Hitoshi Kawanowa¹, Masahiko Aoki¹, Katsumi Takahiro², Toshiyuki Isshiki² (1.Ion Technology Center Co., Ltd, 2.Kyoto Institute of Technology)

11:45 AM - 12:00 PM

[19a-C302-11] A surface morphology of a homo-epitaxial grown GaN on a freestanding GaN substrate

〇FUMIMASA HORIKIRI¹, YOSHINOBU NARITA¹, YOSHIODA TAKEHIRO¹ (1.Sciocs Co. Ltd.)

12:00 PM - 12:15 PM

[19a-C302-12] Optical characterization of GaN layers homoepitaxially grown on a freestanding bulk GaN substrate by metal-organic chemical vapor phase epitaxy

〇Kazunobu Kojima¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Shigefusa Chichibu¹ (1.IMRAM, Tohoku Univ., 2.Sciocs Co. Ltd.)

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