FUMIMASA HORIKIRI

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Speaker, Author, Co-Author

Sun. Mar 18, 2018 9:00 AM - 12:15 PM C302 (52-302)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[18a-C302-1~12] 13.7 Compound and power electron devices and process technology

11:30 AM - 11:45 AM

[18a-C302-10] An etching of the n^--drift layer grown on the freestanding GaN substrate by a pulsed anodic oxidation

〇FUMIMASA HORIKIRI¹, YOSHINOBU NARITA¹, TAKEHIRO YOSHIDA¹ (1.Sciocs Co. Ltd.)

Mon. Mar 19, 2018 9:00 AM - 12:15 PM C302 (52-302)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[19a-C302-1~12] 13.7 Compound and power electron devices and process technology

11:45 AM - 12:00 PM

[19a-C302-11] A surface morphology of a homo-epitaxial grown GaN on a freestanding GaN substrate

〇FUMIMASA HORIKIRI¹, YOSHINOBU NARITA¹, YOSHIODA TAKEHIRO¹ (1.Sciocs Co. Ltd.)