Ryouhei Inoue

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Speaker, Author, Co-Author

Mon. Mar 19, 2018 9:00 AM - 12:15 PM C302 (52-302)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[19a-C302-1~12] 13.7 Compound and power electron devices and process technology

11:00 AM - 11:15 AM

[19a-C302-8] Behavior of plasma-induced defects in p-GaN

〇(M2)Ryouhei Inoue¹, Seiji Nakamura¹, Tsugunori Okumura¹ (1.Tokyo Metro. Univ.)