The 65h JSAP Spring Meeting, 2018

Presentation information

Print

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[19a-C302-1~12] 13.7 Compound and power electron devices and process technology

Mon. Mar 19, 2018 9:00 AM - 12:15 PM C302 (52-302)

Makoto Miyoshi(Nagoya Inst. of Tech.)

11:00 AM - 11:15 AM

[19a-C302-8] Behavior of plasma-induced defects in p-GaN

〇(M2)Ryouhei Inoue1, Seiji Nakamura1, Tsugunori Okumura1 (1.Tokyo Metro. Univ.)

Keywords:p-type GaN, plasma-induced defect