11:15 AM - 11:30 AM
[19a-C302-9] Characterization of traps in MOCVD p-GaN by low-frequency capacitance DLTS
Keywords:DLTS, p-GaN
We have studied traps in p-GaN using the p++p-n+ junction grown by MOCVD on n+-GaN substrate with capacitance (C) DLTS measurements. 1 MHz CDLTS is usually employed, but the lowest temperature is restricted to around 200 K due to the freeze-out of Mg acceptors. In this study, 1 kHz CDLTS is applied and the lowest measurement is extended to 110 K. Two hole traps labelled Ha (0.29 eV) and Hb (0.33 eV) are found with high trap concentrations.