[19a-D103-1~12] 15.6 Group IV Compound Semiconductors (SiC)

[19a-D103-11] Topography Simulation of Trench-Filling Growth of 4H-SiC

〇Kazuhiro Mochizuki¹, Shiyang Ji¹, Ryoji Kosugi¹, Yoshiyuki Yonezawa¹, Hajime Okumura¹ (1.AIST)

Keywords:semiconductor, topography, simulation