Multi-physics simulations of high temperature CVD processes of SiC

Ryosuke Ohshima; Subaru Komura; Kento Kawakami; Yoshihiro Yamamoto; Kenta Chokawa; Katsunori Yoshimatsu; Naoya Okamoto; Emi Makino; Norikazu Hosokawa; Shoichi Onda; Yoshihiro Kangawa; Koichi Kakimoto; Kenji Shiraishi

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[19a-D103-1~12] 15.6 Group IV Compound Semiconductors (SiC)

Mon. Mar 19, 2018 9:00 AM - 12:15 PM D103 (56-103)

Toshinori Taishi(Shinshu Univ.)

11:30 AM - 11:45 AM

[19a-D103-10] Multi-physics simulations of high temperature CVD processes of SiC

〇Ryosuke Ohshima¹, Subaru Komura², Kento Kawakami², Yoshihiro Yamamoto², Kenta Chokawa², Katsunori Yoshimatsu^2,3, Naoya Okamoto², Emi Makino⁴, Norikazu Hosokawa⁴, Shoichi Onda³, Yoshihiro Kangawa^5,3, Koichi Kakimoto⁵, Kenji Shiraishi^2,3 (1.Nagoya Univ., 2.Graduate School of Engineering,Nagoya Univ., 3.IMaSS, 4.DENSO CORP., 5.Kyushu univ.)

Keywords:High temperature CVD processes of SiC