[19a-F202-1~10] 13.2 Exploratory Materials, Physical Properties, Devices

[19a-F202-6] Characterization of Ion-Beam-Synthesized β-FeSi₂ Films Using a Slow Positron Beam

〇Atsushi YABUUCHI¹, Atsushi Kinomura¹, Masaki Maekawa², Atsuo Kawasuso² (1.Kyoto Univ., 2.QST)

Keywords:iron silicide, vacancy, positron annihilation

In this study, ion-beam-synthesized β-FeSi₂ films were probed using a slow positron beam. Enhancement of emission intensity of β-FeSi₂ by Al-doping is conventionally considered to be caused by filling Si vacancies, which act as non-radiative recombination centers, with Al atoms. However, the positron annihilation measurement results suggested Al-doping introduces more vacancies to β-FeSi₂ films.