Influence of post-annealing on the defect properties of BaSi<sub>2</sub> light absorption layers

Presentation information

Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

Mon. Mar 19, 2018 9:30 AM - 12:15 PM F202 (61-202)

Haruhiko Udono(Ibaraki Univ.), Yoshikazu Terai(Kyushu Inst. of Tech.)

11:15 AM - 11:30 AM

〇Yudai Yamashita¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

Keywords:Defect, DLTS, semiconductor