[19a-F202-1~10] 13.2 Exploratory Materials, Physical Properties, Devices

[19a-F202-8] Thickness and Ba/Si deposition rate ratio of Raman spectra of BaSi₂ epitaxial films

〇Takuma Sato¹, Ryota Takabe¹, Yudai Yamashita¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

Keywords:thin film solar cell, lattice defects, Raman spectroscopy

We measured raman spectra of BaSi₂, which is a condidate for new thin film solar cells with high efficiency, to detect lattice defects. We fabricated BaSi₂ epitaxial films with differnt layer thickness and deposition rate ratio. Results of shifts of Raman spectra peak position indicate that the shifts are related to lattice defects in the films.