[19a-F310-1~8] 13.9 Compound solar cells

△ [19a-F310-4] Analysis and Control of Deep-level Defects in Dilute Nitride Semiconductor GaInNAsSb

〇Yilun He¹, Naoya Miyashita², Yoshitaka Okada^1,2 (1.Univ. of Tokyo, 2.RCAST)

Keywords:dilute nitride semiconductor, deep-level defect, annealing

In this study, deep-level defects in dilute nitride semiconductor GaInNAsSb were analyzed to figure out the mechanism of postannealing on improving the collection of the minority carriers and to control the defects by optimizing the annealing temperature. The decrease of an N-related defect and the suppression of an arsenic vacancy related defect caused by high temperature postannealing were significant to enhance the minority-carrier collection, and the annealing temperature 750^oC was considered to be optimal. The property of the GaInNAsSb solar cell was greatly improved by the control of deep-level defects.