Operation characteristics of MoS<sub>2</sub>:P thin film FET prepared by direct sulfurization

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Poster presentation

17 Nanocarbon Technology » 17 Nanocarbon Technology（Poster）

Mon. Mar 19, 2018 9:30 AM - 11:30 AM P6 (P)

9:30 AM - 11:30 AM

〇Tomohiro Momose¹, Atsushi Nakamura¹ (1.Grad. School of Eng., Shizuoka Univ.)

Keywords:molybdenum disulfide, schottky barriers, doping