[19p-C104-1~19] 6.1 強誘電体薄膜

▼ [19p-C104-4] Si Substrate orientation Dependence of Ferroelectric HfO2 Properties Deposited by RF Magnetron Sputtering

〇(D)MinGee Kim¹、Shun-ichiro Ohmi¹ (1.Tokyo Tech.)

キーワード：ferroelectric, HfO2

Ferroelectric HfO₂ is receiving great attention for one-transistor type ferroelectric random access memory. Although it was reported that undoped HfO₂ exhibits orthorhombic phase [1,2], which is ferroelectric phase of HfO₂, direct deposition with orthorhombic phase on Si substrates is necessary to be investigated. The crystallinity of HfO₂ should depend on the Si orientation. In this research, the growth of orthorhombic HfO₂ on Si(100) and Si(111) substrates and electrical characteristics were investigated.