[19p-C202-1~17] 17.3 Layered materials

[19p-C202-4] Strain engineering of electronic properties of monolayer transition metal dichalcogenide materials

〇Shuntaro Oshima¹, Masayuki Toyoda¹, Susumu Saito¹ (1.Tokyo Tech.)

Keywords:transition metal dichalcogenide, strain

Group VI transition metal dichalcogenides (TMDs) are attracting growing attention. In this presentation we introduce first-principles calculation studies dealing with monolayer TMDs and TMD single-walled nanotubes under bi-axial and uni-axial strains. Results show that the small diameter nanotubes have smaller energy gaps compared with monolayer TMDs, and they are found to transit into metals. Details will be discussed in the presentation.