The 65h JSAP Spring Meeting, 2018

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8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[19p-C204-1~17] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Mon. Mar 19, 2018 1:45 PM - 6:15 PM C204 (52-204)

Hisataka Hayashi(TOSHIBA), Yoshihide Kihara(Tokyo Electron Miyagi Limited)

3:15 PM - 3:30 PM

[19p-C204-7] SiO2 and Si etching reactions by CxFy + ion bombardment

〇Kazuhiro Karahashi1, Hu Li1, Tomoko Ito1, Satoshi Hamaguchi1 (1.Osaka Univ.)

Keywords:reactive ion, etching yield, fluorocarbon