Oral presentation

[19p-C204-1~17] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Mon. Mar 19, 2018 1:45 PM - 6:15 PM C204 (52-204)

Hisataka Hayashi(TOSHIBA), Yoshihide Kihara(Tokyo Electron Miyagi Limited)

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▲：英語発表
▼：奨励賞エントリーかつ英語発表
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1:45 PM - 2:00 PM

[19p-C204-1] Investigation of Ge Etching Mechanism by Neutral Beam Etching

〇Shuichi Noda^1,2, Yosuke Tanimoto³, Takuya Ozaki², Hideyuki Kurihara³, Yasuyuki Hoshino³, Kazuhiko Endo^1,2, Seiji Samukawa^1,2 (1.AIST, 2.Tohoku Univ., 3.SHOWA DENKO)

2:00 PM - 2:15 PM

[19p-C204-2] High Aspect Ratio Silicon Nanopillar Structure Fabricated by Neutral Beam Etching and Bio-template

〇Daisuke Ohori¹, Kazuhiko Endo^1,3, Seiji Samukawa^1,2 (1.IFS, Tohoku Univ., 2.AIMR, Tohoku Univ., 3.AIST)

2:15 PM - 2:30 PM

[19p-C204-3] Effects of Low Energy Ar⁺ Ion Irradiation on Hexafluoroacetylacetone (hfac) Adsorbed Ni and Cu Surfaces

〇Tomoko Ito¹, Kazuhiro Karahashi¹, Satoshi Hamaguchi¹ (1.Osaka Univ.)

2:30 PM - 2:45 PM

[19p-C204-4] Rapid Thermal Cyclic Atomic-Level Etching of Tungsten

〇Kazunori Shinoda¹, Yuko Hanaoka², Nobuya Miyoshi¹, Hiroyuki Kobayashi¹, Kohei Kawamura², Masaru Izawa², Kenji Ishikawa³, Masaru Hori³ (1.Hitachi R&D, 2.Hitachi High-Tech, 3.Nagoya Univ.)

2:45 PM - 3:00 PM

△ [19p-C204-5] Elucidation of radical adsorption mechanism for atomic layer etching of gallium nitride

〇Masaki Hasegawa¹, Takayoshi Tsutsumi¹, Atsushi Tanide^1,2, Hiroki Kondo¹, Kenji Ishikawa¹, Masaru Hori¹ (1.Nagoya Univ., 2.SCREEN Holdings Co., Ltd.)

3:00 PM - 3:15 PM

[19p-C204-6] Change in surface morphology of fluorinated Si surface by Ar ion irradiation

Atsuki Asano¹, 〇Takayoshi Tsutsumi¹, Hiroki Kondo¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya Univ.)

3:15 PM - 3:30 PM

[19p-C204-7] SiO₂ and Si etching reactions by CxFy⁺ ion bombardment

〇Kazuhiro Karahashi¹, Hu Li¹, Tomoko Ito¹, Satoshi Hamaguchi¹ (1.Osaka Univ.)

3:30 PM - 3:45 PM

[19p-C204-8] Electronic properties and dissociation channels of C₂H_xF_y compounds (I)

〇Toshio Hayashi¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya Univ. Plasma nano Technology Center)

3:45 PM - 4:00 PM

[19p-C204-9] Electronic properties and dissociation channels of C₂H_xF_y compounds(II)

〇Toshio Hayashi¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya Univ. Plasma nano Technology Center)

4:00 PM - 4:15 PM

[19p-C204-10] Effect of Oxidative Modification on Spin On Glass Film using Microwave Excited Bubble Plasma in Water

〇Sachiko Fujisawa¹, Masakuni Ikagawa², Nobuaki Makino² (1.Toshiba Materials Co., Ltd, 2.Toshiba Corp.)

4:30 PM - 4:45 PM

△ [19p-C204-11] Temporal variation of Ar metastable density in pulse modulated inductively coupled plasma and its impact on the VUV/UV radiation-induced damage

〇Naoki Takeda¹, Yasufumi Miyoshi², Kenji Ishikawa¹, Takayoshi Tsutsumi¹, Keigo Takeda³, Takayuki Ohta³, Hiroki Kondo¹, Masanaga Fukasawa², Tetsuya Tatsumi², Masaru Hori¹ (1.Nagoya Univ., 2.Sony Semiconductor Solutions Corp., 3.Meijo Univ.)

4:45 PM - 5:00 PM

[19p-C204-12] Generation & annealing of plasma-induced defects ~ ion-created residual defects ~

〇Shota Nunomura¹, Isao Sakata¹, Koji Matsubara¹ (1.AIST RCPV)

5:00 PM - 5:15 PM

[19p-C204-13] Generation and annealing of plasma-induced defects ~ activation energy of annealing~

〇Shota Nunomura¹, Isao Sakata¹, Koji Matsubara¹ (1.AIST RCPV)

5:15 PM - 5:30 PM

[19p-C204-14] Model Predictions of Capacitance-Voltage (C-V) Characteristic of Plasma Process-Damaged Si Substrate

〇Takashi Hamano¹, Yoshinori Nakakubo¹, Koji Eriguchi¹ (1.Kyoto Univ.)

5:30 PM - 5:45 PM

△ [19p-C204-15] First-principles-based prediction of the local structures damaged by plasma exposures

〇Yuta Yoshikawa¹, Koji Eriguchi¹ (1.Kyoto Univ.)

5:45 PM - 6:00 PM

[19p-C204-16] Controllability improvement of the etching rate distribution by pulse plasma

〇Mamoru Yakushiji¹, Kenichi Kuwahara¹, Michikazu Morimoto¹ (1.Hitachi High-Technologies)

6:00 PM - 6:15 PM

[19p-C204-17] Improvement of Etching Process Distribution Controllability within a Wafer by Tuning Etching-byproduct Density Distribution

〇Tetsuo Kawanabe¹, Isao Mori¹, Motohiro Tanaka¹, Naoki Yasui¹ (1.HHT)

Oral presentation

[20a-C204-1~12] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Tue. Mar 20, 2018 9:00 AM - 12:15 PM C204 (52-204)

Masanori Shinohara(Natl. Inst. of Tech.,Sasebo Col.)

△：奨励賞エントリー
▲：英語発表
▼：奨励賞エントリーかつ英語発表
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9:00 AM - 9:15 AM

[20a-C204-1] Reduction of tarnished silver by Ar/H₂ plasma and in-situ optical emission spectroscopy

〇(M1)Masaaki Tsukamoto¹, Kei Hosomi¹, Katsumi Takahiro¹, Fumitaka Nishiyama², Shin Yokoyama² (1.Kyoto Inst. Technol., 2.Hiroshima Univ.)

9:15 AM - 9:30 AM

[20a-C204-2] Nitriding treatment by Active Screen Plasma and its evaluation

〇(P)Susumu Ichimura¹, Seigo Takashima¹, Ippei Tsuru², Daichi Ohkubo², Hideaki Matsuo², Mineo Goto² (1.PLACIA, 2.NAKANIHON-RO KOGYO)

9:30 AM - 9:45 AM

[20a-C204-3] Formation of C-Axis-Oriented Aluminum Nitride Thin Films with Plasma Enhanced Reactive Pulsed DC Magnetron Sputtering

〇Kosuke Takenaka¹, Tomoki Yoshitani¹, Giichiro Uchida¹, Yuichi Setsuhara¹ (1.Osaka Univ.)

9:45 AM - 10:00 AM

[20a-C204-4] Simulation of Non-Equilibrium Atmospheric Pressure Hydrocarbon Plasmas for Carbon Materials Fabrication

〇(M2)Kazuma Ohki¹, Akinori Oda¹, Takayuki Ohta², Hiroyuki Kousaka³ (1.Chiba Inst. Technol., 2.Meijo Univ., 3.Gifu Univ.)

10:00 AM - 10:15 AM

[20a-C204-5] The formation of super water-repellent tree-formed a-C:F by the electronic excitation of the c-C₄F₈ condensation gas

〇(B)Toshihiro Mitani¹, Yoshinobu Uegaki², Tetsuya Sato¹ (1.Univ. Yamanashi, 2.Yamanashi Indust. Tech. Center)

10:15 AM - 10:30 AM

[20a-C204-6] High-rate synthesis of fluorocarbon film using a concentrated CF₄ gas by sub-atmospheric pressure plasma and evaluation of the film property

〇Tomoyuki Tanaka¹, Kikura Jou¹, Takemoto Hiroki¹, Kakiuchi Hiroaki¹, Yasutake Kiyoshi¹, Ohmi Hiromasa¹ (1.Osaka Univ)

10:45 AM - 11:00 AM

△ [20a-C204-7] The effect of intermittent hydrogen plasma treatment on bonding structure of amorphous carbon film grown by radical injection-PECVD

〇(DC)Hirotsugu Sugiura¹, Hiroki Kondo¹, Kenji Ishikawa¹, Takayoshi Tsutsumi¹, Keigo Takeda², Makoto Sekine¹, Masaru Hori³ (1.Nagoya Univ. Eng., 2.Meijo Univ., 3.Nagoya Univ. Inst. of Innovation for Future Society)

11:00 AM - 11:15 AM

△ [20a-C204-8] Removal of DLC Films by Using Plasma Generated by Two Power Supplies

〇Yuki Kondo¹, Tsuyoshi Tanimoto¹, Toru Harigai¹, Fuminori Yoda¹, Satoshi Degai¹, Yoshiyuki Suda¹, Hirofumi Takikawa¹, Hidenobu Gonda², Yasuhiro Hadano³, Masao Kamiya⁴ (1.Toyohashi Univ. Technol., 2.OSG Coat. Service Co., Ltd., 3.Kojima Ind. Corp., 4.Itoh Opt. Ind. Co., Ltd.)

11:15 AM - 11:30 AM

△ [20a-C204-9] Photoluminescence of (ZnO)_0.73(InN)_0.27fabricated by sputter epitaxy

〇Nanoka Miyahara¹, Kazuya Iwasaki¹, Liu Shi¹, Daisuke Yamashita¹, Daisuke Nakamura¹, Hyunwoong Seo¹, Kazunori Koga¹, Masaharu Shiratani¹, Naho Itagaki¹ (1.Kyushu Univ.)

11:30 AM - 11:45 AM

△ [20a-C204-10] Study on the low temperature and highly efficient deposition process of Silicon Oxide Gate Dielectric layers Using Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition

〇Yuichiro Kimoto¹, Koji Terawaki¹, Hiroshi Yamasaki¹, Takeshi Maekawa¹, Hiromasa Ohmi¹, Hiroaki Kakiuchi¹, Kiyoshi Yasutake¹ (1.Osaka Univ.)

11:45 AM - 12:00 PM

△ [20a-C204-11] Dependence of Microwave Hydrogen Plasma Treatement on S/Mo Ratio of MoS₂ Film Grown by Chemical Vapor Deposition

〇Masahiro Sugiyama¹, Yuta Nabuchi¹, Akihisa Ogino¹ (1.Shizuoka Univ.)

12:00 PM - 12:15 PM

△ [20a-C204-12] Formation of ZnO nano particles by laser-assisted sputtering

〇Wataru Wakaki¹, Akio Sanpei¹, Noriyuki Hasuike¹, Susumu Kamoi² (1.Kyoto Inst. Tech., 2.Kyoto Res. Park)

Sessions

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[19p-C204-1~17] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[19p-C204-1] Investigation of Ge Etching Mechanism by Neutral Beam Etching

[19p-C204-2] High Aspect Ratio Silicon Nanopillar Structure Fabricated by Neutral Beam Etching and Bio-template

[19p-C204-3] Effects of Low Energy Ar⁺ Ion Irradiation on Hexafluoroacetylacetone (hfac) Adsorbed Ni and Cu Surfaces

[19p-C204-4] Rapid Thermal Cyclic Atomic-Level Etching of Tungsten

△ [19p-C204-5] Elucidation of radical adsorption mechanism for atomic layer etching of gallium nitride

[19p-C204-6] Change in surface morphology of fluorinated Si surface by Ar ion irradiation

[19p-C204-7] SiO₂ and Si etching reactions by CxFy⁺ ion bombardment

[19p-C204-8] Electronic properties and dissociation channels of C₂H_xF_y compounds (I)

[19p-C204-9] Electronic properties and dissociation channels of C₂H_xF_y compounds(II)

[19p-C204-10] Effect of Oxidative Modification on Spin On Glass Film using Microwave Excited Bubble Plasma in Water

△ [19p-C204-11] Temporal variation of Ar metastable density in pulse modulated inductively coupled plasma and its impact on the VUV/UV radiation-induced damage

[19p-C204-12] Generation & annealing of plasma-induced defects ~ ion-created residual defects ~

[19p-C204-13] Generation and annealing of plasma-induced defects ~ activation energy of annealing~

[19p-C204-14] Model Predictions of Capacitance-Voltage (C-V) Characteristic of Plasma Process-Damaged Si Substrate

△ [19p-C204-15] First-principles-based prediction of the local structures damaged by plasma exposures

[19p-C204-16] Controllability improvement of the etching rate distribution by pulse plasma

[19p-C204-17] Improvement of Etching Process Distribution Controllability within a Wafer by Tuning Etching-byproduct Density Distribution

[20a-C204-1~12] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[20a-C204-1] Reduction of tarnished silver by Ar/H₂ plasma and in-situ optical emission spectroscopy

[20a-C204-2] Nitriding treatment by Active Screen Plasma and its evaluation

[20a-C204-3] Formation of C-Axis-Oriented Aluminum Nitride Thin Films with Plasma Enhanced Reactive Pulsed DC Magnetron Sputtering

[20a-C204-4] Simulation of Non-Equilibrium Atmospheric Pressure Hydrocarbon Plasmas for Carbon Materials Fabrication

[20a-C204-5] The formation of super water-repellent tree-formed a-C:F by the electronic excitation of the c-C₄F₈ condensation gas

[20a-C204-6] High-rate synthesis of fluorocarbon film using a concentrated CF₄ gas by sub-atmospheric pressure plasma and evaluation of the film property

△ [20a-C204-7] The effect of intermittent hydrogen plasma treatment on bonding structure of amorphous carbon film grown by radical injection-PECVD

△ [20a-C204-8] Removal of DLC Films by Using Plasma Generated by Two Power Supplies

△ [20a-C204-9] Photoluminescence of (ZnO)_0.73(InN)_0.27fabricated by sputter epitaxy

△ [20a-C204-10] Study on the low temperature and highly efficient deposition process of Silicon Oxide Gate Dielectric layers Using Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition

△ [20a-C204-11] Dependence of Microwave Hydrogen Plasma Treatement on S/Mo Ratio of MoS₂ Film Grown by Chemical Vapor Deposition

△ [20a-C204-12] Formation of ZnO nano particles by laser-assisted sputtering

Authentication

Sessions

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[19p-C204-1~17] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

△ [19p-C204-5] Elucidation of radical adsorption mechanism for atomic layer etching of gallium nitride

△ [19p-C204-11] Temporal variation of Ar metastable density in pulse modulated inductively coupled plasma and its impact on the VUV/UV radiation-induced damage

△ [19p-C204-15] First-principles-based prediction of the local structures damaged by plasma exposures

[20a-C204-1~12] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

△ [20a-C204-7] The effect of intermittent hydrogen plasma treatment on bonding structure of amorphous carbon film grown by radical injection-PECVD

△ [20a-C204-8] Removal of DLC Films by Using Plasma Generated by Two Power Supplies

△ [20a-C204-9] Photoluminescence of (ZnO)0.73(InN)0.27 fabricated by sputter epitaxy

△ [20a-C204-10] Study on the low temperature and highly efficient deposition process of Silicon Oxide Gate Dielectric layers Using Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition

△ [20a-C204-11] Dependence of Microwave Hydrogen Plasma Treatement on S/Mo Ratio of MoS2 Film Grown by Chemical Vapor Deposition

△ [20a-C204-12] Formation of ZnO nano particles by laser-assisted sputtering

Authentication

△ [20a-C204-9] Photoluminescence of (ZnO)_0.73(InN)_0.27fabricated by sputter epitaxy

△ [20a-C204-11] Dependence of Microwave Hydrogen Plasma Treatement on S/Mo Ratio of MoS₂ Film Grown by Chemical Vapor Deposition