Characterization of AlGaN/GaN MOS-HEMTs with Dual Field Plates

Ryota Yamaguchi; Joel Asubar; Hirokuni Tokuda; Masaaki Kuzuhara

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[19p-C302-1~18] 13.7 Compound and power electron devices and process technology

Mon. Mar 19, 2018 1:45 PM - 6:30 PM C302 (52-302)

Kozo Makiyama(Fujitsu Lab.), Masashi Kato(NITech)

4:30 PM - 4:45 PM

[19p-C302-11] Characterization of AlGaN/GaN MOS-HEMTs with Dual Field Plates

〇(M1)Ryota Yamaguchi¹, Joel Asubar¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (1.Fukui Univ.)

Keywords:field plate, MOS, AlGaN/GaN HEMT

we have fabricated a AlGaN/GaN MOS-HEMT with dual gate and source FPs and investigated DC and pulsed I-V characteristics, together with the threshold voltage (V_th) stability under forward and negative gate bias stress conditions.