[19p-C302-1~18] 13.7 Compound and power electron devices and process technology

[19p-C302-10] Theoretical study on Improved Current Collapse in AlGaN/GaN HEMT with Field Plate Structure

〇(PC)Kazuki Kodama¹, Joel Asubar¹, Hirokuni Tokuda¹, Masaaki Kuzuhara¹ (1.Fukui Univ.)

Keywords:AlGaN/GaN HEMT, Current Collapse, Monte Carlo simulation

AlGaN/GaN HEMT is attracting attention as emerging high-breakdown and low-loss power switching devices. However, there is significant issue that an increase in on-resistance is caused by current collapse. Although a field plate structure is used to suppress the phenomena, it is lack of the understanding its mechanisms. In this work, current collapse in AlGaN/GaN HEMT was simulated by 2D ensemble Monte Carlo method. The calculation results showed that the introduction of field plate gave rise to the improvement of current collapse.