The 65h JSAP Spring Meeting, 2018

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13 Semiconductors » 13.7 Compound and power electron devices and process technology

[19p-C302-1~18] 13.7 Compound and power electron devices and process technology

Mon. Mar 19, 2018 1:45 PM - 6:30 PM C302 (52-302)

Kozo Makiyama(Fujitsu Lab.), Masashi Kato(NITech)

3:45 PM - 4:00 PM

△ [19p-C302-9] Fabrication of N-polar GaN/AlGaN heterostructure by transferred substrate method

〇Yuki Yoshiya1, Takuya Hoshi1, Hiroki Sugiyama1, Hideaki Matsuzaki1 (1.NTT Device Technology Labs)

Keywords:GaN, N-polar, transferred substrate method