[19p-C302-1~18] 13.7 Compound and power electron devices and process technology

[19p-C302-14] Effects of RIE-damaged layer removal on electrical properties of AlGaN/GaN structures prepared by AlGaN regrowth on RIE-GaN surface

〇Akio Yamamoto¹, Keito Kanatani¹, Shinya Makino¹, Masaaki Kuzuhara¹ (1.Univ. of Fukui)

Keywords:GaN, RIE

In the JSAP 2017 Spring Meeting, we reported that an electron mobility as high as 1350 cm²/Vs was obtained in AlGaN/GaN structures prepared by MOVPE of AlGaN on RIE-treated GaN surfaces. However, the poor reproducibility was found in obtaining excellent electrical properties for AlGaN/RIE-GaN structures. This is believed to be mainly due to contaminants on RIE-treated GaN surfaces. In this paper, we study effects of HCl treatment of RIE-GaN surface to remove contaminants together with RIE damage. By employing the HCl treatment, the reproducibility in obtaining excellent electrical properties is much improved and an electron mobility as high as 1470 cm²/Vs, which is comparable to that for AlGaN/GaN structures without RIE, is obtained.