[19p-C302-1~18] 13.7 Compound and power electron devices and process technology

[19p-C302-2] Improvement of MOS channel properties on Mg implanted GaN MOSFETs

〇Shinya Takashima¹, Ryo Tanaka¹, Katsunori Ueno¹, Hideaki Matsuyama¹, Masaharu Edo¹, Kazunobu Kojima², Shigefusa F. Chichibu^2,3, Akira Uedono⁴, Kiyokazu Nakagawa⁵ (1.Fuji Electric, 2.Tohoku Univ., 3.Nagoya Univ., 4.Univ. Tsukuba, 5.Univ. Yamanashi)

Keywords:Gallium Nitride, MOSFET, implantation

We have demonstrated the normally-off operation of the lateral MOSFET fabricated on [Mg] 1E18 cm-3 implanted GaN layers. In this time, we report the improvement of the MOS channel characteristics by applying the improved condition for the gate oxide deposition and the suppression of the surface roughness after the activation annealing step. We have obtained the maximum field effect mobility of about 110 cm2/Vs on the Mg implanted layer, which was comparable to that on the Mg-doped epi layers.