Shinya Takashima

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Speaker, Author, Co-Author

Mon. Mar 19, 2018 1:45 PM - 6:30 PM C302 (52-302)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[19p-C302-1~18] 13.7 Compound and power electron devices and process technology

2:00 PM - 2:15 PM

[19p-C302-2] Improvement of MOS channel properties on Mg implanted GaN MOSFETs

〇Shinya Takashima¹, Ryo Tanaka¹, Katsunori Ueno¹, Hideaki Matsuyama¹, Masaharu Edo¹, Kazunobu Kojima², Shigefusa F. Chichibu^2,3, Akira Uedono⁴, Kiyokazu Nakagawa⁵ (1.Fuji Electric, 2.Tohoku Univ., 3.Nagoya Univ., 4.Univ. Tsukuba, 5.Univ. Yamanashi)

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