[19p-D103-1~17] 15.6 Group IV Compound Semiconductors (SiC)

[19p-D103-5] SiC Epitaxial Reactor Repetitive Cleaning Using ClF₃ Gas and Pyrolytic Carbon-Coated Susceptor

〇Keisuke Kurashima¹, Hitoshi Habuka¹, Hideki Ito², Shinichi Mitani², Yoshinao Takahashi³ (1.Yokohama Nat. Univ., 2.NuFlare Technologies, 3.Kanto Denka Kogyo)

Keywords:silicon carbide, chlorine trifluoride, cleaning

SiC CVD reactor cleaning was done by using ClF₃ gas and pyrolytic carbon-coated susceptor. SiC film was made on the same susceptor again and partially removed. The detail of this cleaning will be discussed.