[19p-E202-1~8] Materials Science and Advanced Electronics Created by Singularity of Nitride Semiconductors: How far can we control the defects? Advanced characterization and functional exploration

[19p-E202-6] Three-Dimensional Observation of Dislocation in GaN and the Effect of Dilsocation in Power Devices

〇Atsushi Tanaka^1,2, Shigeyoshi Usami³, Yuto Ando³, Kentaro Nagamatsu¹, Maki Kushimoto³, Manato Deki¹, Syugo Nitta¹, Yoshio Honda¹, Hiroshi Amano^1,2,4,5 (1.Nagoya Univ. IMaSS, 2.NIMS, 3.Dept. of Electronics, Nagoya Univ., 4.Nagoya Univ. ARC, 5.NU VBL)

Keywords:gallium nitride, dislocation, power device