The 65h JSAP Spring Meeting, 2018

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Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[19p-F202-1~16] 13.2 Exploratory Materials, Physical Properties, Devices

Mon. Mar 19, 2018 1:45 PM - 6:15 PM F202 (61-202)

Takashi Suemasu(Univ. of Tsukuba), Kenji Yamaguchi(QST), Kosuke Hara(Univ. of Yamanashi)

5:15 PM - 5:30 PM

[19p-F202-13] Growth of Ru2Si3 thin films by solid phase epitaxy and their electrical properties

〇Kenta Setojima1, Shuya Ikeda1, Kazuya Ogi1, Naohiro Oka1, Yoshikazu Terai1 (1.Kyushu Inst. of Tech.)

Keywords:ruthenium silicide, solid phase epitaxy, electrical properties