[19p-G203-1~7] Is Ge substituting for Si?

▲ [19p-G203-3] High quality UTB GeOI by HEtero-Layer-Lift-Off (HELLO) technology for future Ge CMOS application

〇Wen Hsin Chang¹, Toshifumi Irisawa¹, Hiroyuki Ishii¹, Hiroyuki Hattori¹, Hiroyuki Ota¹, Hideki Takagi¹, Yuichi Kurashima¹, Noriyuki Uchida¹, Tatsuro Maeda¹ (1.AIST)

Keywords:GeOI, UTB

Ultrathin body (UTB) Ge-on-insulator (GeOI) are compulsory structure for improved gate control and immunity against short channel effects in the ultimately scaled high performance and low power CMOS. However, severe mobility degradation has been reported as Ge thickness scaling down less than 20 nm. Therefore, more sophisticated fabrication methods of UTB GeOI substrates are strongly required for improving its quality. In this work, a novel Ge layer transfer technology called HEtero-Layer-Lift-Off (HELLO) utilizing SiGe etch stop layer and back interface engineering has been developed both for precise control of T_body and high back interfacial quality in GeOI structure. Enhancement of carrier mobility of UTB GeOI n and pMOSFETs has been demonstrated, showing the potential of UTB GeOI substrates for future Ge CMOS realization.