[19p-P11-1~31] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19p-P11-12] Fabrication and Structural Characterization of alpha-Ga₂O₃ Thin Film on m-plane Sapphire with alpha-(Al,Ga)₂O₃ Buffer Layer

〇(M1)Takahito Sekiyama¹, Katsuya Ota¹, Kazuaki Akaiwa¹, Tomoki Abe¹, Takashi Shinohe², Kunio Ichino¹ (1.Tottori Univ., 2.FLOSFIA)

Keywords:crystal growth, oxide semiconductor, Ga2O3