The 65h JSAP Spring Meeting, 2018

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7 Beam Technology and Nanofabrication » 7.5 Ion beams

[20a-B403-1~10] 7.5 Ion beams

Tue. Mar 20, 2018 9:00 AM - 11:45 AM B403 (53-403)

Toshio Seki(Kyoto Univ.), Junichi Yanagisawa(Univ. of Shiga Pref.)

9:45 AM - 10:00 AM

[20a-B403-4] Metal Etching by Gas Cluster Ion Beams with Acetylacetone Vapor

〇Noriaki Toyoda1, Akira Okamoto1 (1.Grad. School of Eng., Univ. of Hyogo)

Keywords:acetylacetone, GCIB, atomic layer etching

We had demonstrated halogen-free atomic layer etching (ALE) by gas cluster ion beam (GCIB) with acetic acid vapor. In this study, acetylacetone (acac) is used as background gas instead of acetic acid during GCIB irradiations. Etching effects for various metals and applications for halogen-free ALE by GCIB with acac are discussed.