[20a-C101-1~11] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[20a-C101-2] Study for Developing Metallization Method Using Electrically Induced Bubble and Plasma

〇Keita Ichikawa¹, Yudai Fukuyama², Shingo Maeda¹, Yoko Yamanishi² (1.Sibaura Inst., 2.Kyushu Univ.)

Keywords:microbubble, plasma, metallization

In this study, we develope new metallization method which using plasma and electrically induced microbubble. Our method can metallize surfece of target locally without any surface treatment and being affected by the presence or absence of target conductivity.