[20a-C101-1~11] 13.4 Si系プロセス・Si系薄膜・配線・MEMS・集積化技術

▲ [20a-C101-4] Reduction in Connecting Resistivity of Intermediate Adhesive Layer by SF₆ Plasma Treatment for Mechanical Stacking Multi Junction Solar Cells

〇(B)Kosuke Oshinari¹、Masaki Kondo¹、Mamiko Yagi¹、Masahiko Hasumi¹、Wakana Kubo¹、Junichi Shirakashi¹、Toshiyuki Sameshima¹、Mohamed Amara² (1.TUAT、2.INSA)

キーワード：mechanical stacking multi junction solar cell, connecting resistivity

In order to improve the efficiency of mechanical stacking multi junction solar cell, we tried to reduce the connecting resistivity of the transparent intermediate layer dispersed with ITO conductive particles. We have recently achieved the connecting resistivity of 0.3Ωcm² in the case of the stacking with polished surfaces of Si substrates with low resistivity by solidifying epoxy adhesive dispersed with 20-um-diameter ITO conductive particles at 7.4wt% under the pressure of 0.8MPa. In this report, the connecting resistivity was markedly reduced to 0.12Ωcm² by forming the roughness of about 30nm on the Si substrate using SF₆ plasma irradiation.