[20a-C202-1~8] 17.3 Layered materials

△ [20a-C202-2] Aligned growth of MoS₂ and its application to in-plane heterostructures

〇Kenshiro Suenaga¹, Yoshihiro Shiratsuchi¹, Dong Ding¹, Kenji Kawahara^3,2, Hiroki Hibino², Hiroki Ago^1,2 (1.Kyushu Univ., 2.Global Innovation Center, 3.Kwansei Gakuin Univ.)

Keywords:Molybdenum disulfide, aligned growth, in-plane heterostructure

Molybdenum disulfide (MoS₂), a type of transition metal dichalcogenide (TMDC), has excellent n-type semiconductor characteristics and photoresponsivity, and is expected to be applied as optical and electronic devices. In this study, new aligned growth of MoS₂ was found by changing the supply ratio of sulfur (S) and molybdenum oxide (MoO₃) which are precursors of MoS₂. Also, using this aligned growth, we have developed an in-plane heterostructure of MoS₂ with another two-dimensional material.