2018年第65回応用物理学会春季学術講演会

講演情報

一般セッション(口頭講演)

17 ナノカーボン » 17.3 層状物質

[20a-C202-1~8] 17.3 層状物質

2018年3月20日(火) 10:00 〜 12:15 C202 (52-202)

北浦 良(名大)

10:30 〜 10:45

[20a-C202-3] Synthesis of Large Single Crystal and Monolayer WS2 by Rapid Cooling Thermal CVD

〇(D)Chao Li1、Toshiro Kaneko1、Toshiaki Kato1,2 (1.Tohoku Univ.、2.JST PRESTO)

キーワード:large size synthesis, chemical vapor deposition, single crystal and monolayer

We have developed a novel method to synthesize the large size single crystal and monolayer tungsten disulfide (WS2) by cooling the reaction region rapidly during the CVD process, named rapid cooling CVD. As a result, single crystal and monolayer WS2 was successfully synthesized up to 320 µm, which is one of the biggest triangles among the reported results ever. During the rapid cooling process, crystal can be grown into large size with the single crystal due to the increased precursor supply and highspeed crystal growth.