[20a-D103-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[20a-D103-4] Ab initio calculations on novel interface states caused by the stacking sequence in SiC/SiO₂ interfaces

〇Yuichiro Matsushita¹, Atsushi Oshiyama¹ (1.The Univ. of Tokyo)

Keywords:SiC, interface, interface state

In this study, we found a new type of interface states in SiC/SiO2 interfaces based on ab-initio calculations. In particular, hexagonal interface (ABCB-stacking/ SiO₂) shows an interface state at 1.2 eV above the conduction-band minimum (CBM) and stacking-fault interface shows an interface state at 0.3 eV below the CBM.