Bonding states of 4H-SiC m-face surface after annealing by H2/N2 gas mixture

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

Tue. Mar 20, 2018 9:00 AM - 12:00 PM D103 (56-103)

10:15 AM - 10:30 AM

〇Atsushi Shioji¹, Takeshi Fujii², Hiroshi Ando¹, Anton Visikovskiy¹, Takashi Kajiwara¹, Satoru Tanaka¹ (1.Kyushu Univ., 2.Fuji Electric.)

Keywords:SiC surface