The 65h JSAP Spring Meeting, 2018

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[20a-D103-1~11] 15.6 Group IV Compound Semiconductors (SiC)

Tue. Mar 20, 2018 9:00 AM - 12:00 PM D103 (56-103)

Shin-Ichiro Kuroki(Hiroshima Univ.)

10:45 AM - 11:00 AM

[20a-D103-7] Observation of defect distributions at SiO2/4H-SiC interfaces by high-resolution local deep level transient spectroscopy

〇Yuji Yamagishi1, Yasuo Cho1 (1.Tohoku Univ.)

Keywords:MOS interface, DLTS, trap states